The properties and structures of the mono- and the di- vacancy in Cu crystal

The structures and energies of formation and migration of the mono- and di-vacancy in Cu crystal have been described and calculated with modified analytical embedded atom method (MAEAM). The lattice relaxation is considered with molecular dynamics (MD) method at T=0 K. The results show the FN di-vacancy is the most stable and likely occurs in practice from the energy minimization. Compared with the mono-vacancy, the formation energy of the FN di-vacancy is higher than that of a mono-vacancy, but lower than that of two isolated mono-vacancy. The preferred migration mechanism of the FN di-vacancy is multi-jump of either vacancy (rotating the di-vacancy). The calculated migration energy of the FN di-vacancy is lower than that of a mono-vacancy, so the FN di-vacancy is easier to migrate. All of the calculated results are in good agreement with the experimental values.     

Robust locally testable codes and products of codes

We continue the investigation of locally testable codes, i.e., error‐correcting codes for which membership of a given word in the code can be tested probabilistically by examining it in very few locations. We give two general results on local testability: First, motivated by the recently proposed notion of robust probabilistically checkable proofs, we introduce the notion of robust local testability of codes. We relate this notion to a product of codes introduced by Tanner and show a very simple composition lemma for this notion. Next, we show that codes built by tensor products can be tested robustly and somewhat locally by applying a variant of a test and proof technique introduced by Raz and Safra in the context of testing low‐degree multivariate polynomials (which are a special case of tensor codes). Combining these two results gives us a generic construction of codes of inverse polynomial rate that are testable with poly‐logarithmically many queries. We note that these locally testable tensor codes can be obtained from any linear error correcting code with good distance. Previous results on local testability, albeit much stronger quantitatively, rely heavily on algebraic properties of the underlying codes. © 2006 Wiley Periodicals, Inc. Random Struct. Alg., 2006     

有限几何和PBIB设计(Ⅱ)

在有限辛几何中,取定一个(m,s)型子空间,并取与这个子空间正交且不含于这个子空间的一维子空间作处理,我们构作了一些结合方案和PBIB设计,并计算了它们的参数.     

接枝羧基的有限长碳纳米管电子结构的第一性原理研究

基于局域密度泛函理论，采用第一性原理方法，建立了对(5,5)型和(9,0)型有限长碳纳米管接枝羧基官能团的原子模型，通过计算其电子分布和态密度的变化，讨论羧基官能团对碳纳米管电子结构和电子输运特性的影响. 计算表明，接枝羧基的碳纳米管,其电子结构明显改变，其费米能级上的电子态密度下降；最高占据轨道上的非定域程度减弱,致使电子输运性能呈下降趋势. 关键词： 碳纳米管 密度泛函理论 电子结构     

钐(Ⅱ)类卡宾CH_3SmCH_2X(X=Cl、Br和Ⅰ)促进乙烯环丙烷化反应途径的理论研究(英文)

用密度泛函B3LYP方法研究了过渡金属钐类卡宾与乙烯的环丙烷化反应的机理。对三种不同的钐的SS试剂CH_3SmCH_2X(其中X=Cl、Br和Ⅰ)分别和CH_2CH_2反应的各反应物、中间体、过渡态和产物构型的全部结构几何参数进行了优化,用内禀反应坐标(IRC)计算和频率分析方法,对过渡态进行了验证。结果表明：CH_3SmCH_2X(其中X=Cl、Br和Ⅰ)与CH_2CH_2环丙烷化反应按亚甲基转移通道(通道A)和卡宾金属化通道(通道B)都可以进行,与锂类卡宾的反应机理相同,只是按亚甲基转移通道(通道A)进行反应较容易一些,而且此反应在较低的温度下就可以发生。     

扫描隧道显微镜研究石墨表面的莫尔图

利用扫描隧道显微镜研究石墨表面的大尺度周期性图样．研究结果表明,莫尔图起源于石墨深层的缺陷,实验结果与理论完全吻合,并且第一次在实验上证明了纳米波可以穿透多层石墨而没有明显衰减．     

基于半导体光放大器进行光标签提取的性能分析

利用半导体光放大器增益饱和数学模型，第一次分析了基于单个半导体放大器进行光标签提取的节点性能.通过对半导体光放大器的参量分析和优化，仿真显示，对于标签速率2.5 Gb/ s 、净荷速率40 Gb/s 的光分组包，提取的标签消光比可达到13 dB.     

关于“级别婚”的数学分析

介绍了19世纪存在于澳大利亚土著中的一种婚姻形式—级别婚,从群论的角度说明级别婚的三种主要形式都对应于一个对称群,从而可以用几何方法形象的表示这种婚姻形式;进而,从对称的观点说明婚姻形式从简单到复杂的演化过程,代数上对应于对称群阶数的增加,几何上则对应于对称性的加强.     

带有无限到达源的Re-entrant Line的稳定性

用Foster判别准则,Weiss[13]给出了带有无限到达源的两站三步re-entrant line的稳定性的充分条件．本文用两种不同的方法得到了其稳定性的充分必要条件,即: 二维随机游动方法和Foster判别准则．同时,我们又用流体模型方法得到了系统稳定的充分条件,大大地简化了Weiss[13]的证明．     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.